6 lake street, lawrence, massachusetts 01841 phone (978) 620-2600 fax (978) 689-0803 website: http://www.microsemi.com 105 ? 1n3016bur-1 thru 1n3045bur-1 available in jan, jantx and jantxv per mil-prf-19500/115 ? 1 watt zener diodes ? leadless package for surface mount ? double plug construction ? metallurgically bonded 1n3016bur-1 thru 1n3045bur-1 and cdll3016b thru cdll3045b figure 1 design data case: do-213ab , hermetically sealed glass case. (melf, ll41) lead finish: tin / lead thermal resistance: ( r o jec ): 50 c/w maximum at l = 0 inch thermal impedance: ( z o jx ): 15 c/w maximum polarity: diode to be operated with the banded (cathode) end positive with respect to the opposite end. mounting surface selection: the axial coefficient of expansion (coe) of this device is approximately +6ppm/c. the coe of the mounting surface system should be selected to provide a suitable match with this device. millimeters inches dim min max min max d 2.39 2.66 .094 .105 f 0.41 0.55 .016 .022 g 4.80 5.20 .189 .205 g1 4.11 ref. .159 ref. s 0.03 min. .001 min. maximum ratings operating temperature: -65c to +175c storage temperature: -65c to +175c dc power dissipation: 1watt @ t ec = +125c power derating: 20 mw / c above t ec = +125c forward voltage @ 200ma: 1.2 volts maximum electrical characteristics @ 25c cdi nominal zener max. dc type zener test maximum zener impedance zener max. reverse number voltage current (note 3) current leakage current v z @ 1 zt 1 zt 1 zm l r @ v r (note 1) (note 2) z zt @ 1 zt z zk @ 1 zk volts ma ohms ohms ma ma a volts cdll3016b 6.8 37 3.5 700 1.0 140 5.0 5.2 cdll3017b 7.5 34 4.0 700 .5 125 5.0 5.7 cdll3018b 8.2 31 4.5 700 .5 115 5.0 6.2 cdll3019b 9.1 28 5 700 .5 105 5.0 6.9 cdll3020b 10 25 7 700 .25 95 5.0 7.6 cdll3021b 11 23 8 700 .25 85 1.0 8.4 cdll3022b 12 21 9 700 .25 80 1.0 9.1 cdll3023b 13 19 10 700 .25 74 0.5 9.9 cdll3024b 15 17 14 700 .25 63 0.5 11.4 cdll3025b 16 15.5 16 700 .25 60 0.5 12.2 cdll3026b 18 14 20 750 .25 52 0.5 13.7 cdll3027b 20 12.5 22 750 .25 47 0.5 15.2 cdll3028b 22 11.5 23 750 .25 43 0.5 16.7 cdll3029b 24 10.5 25 750 .25 40 0.5 18.2 cdll3030b 27 9.5 35 750 .25 34 0.5 20.6 cdll3031b 30 8.5 40 1000 .25 31 0.5 22.8 cdll3032b 33 7.5 45 1000 .25 28 0.5 25.1 cdll3033b 36 7.0 50 1000 .25 26 0.5 27.4 cdll3034b 39 6.5 60 1000 .25 23 0.5 29.7 cdll3035b 43 6.0 70 1500 .25 21 0.5 32.7 cdll3036b 47 5.5 80 1500 .25 19 0.5 35.8 cdll3037b 51 5.0 95 1500 .25 18 0.5 38.8 cdll3038b 56 4.5 110 2000 .25 17 0.5 42.6 cdll3039b 62 4.0 125 2000 .25 15 0.5 47.1 cdll3040b 68 3.7 150 2000 .25 14 0.5 51.7 cdll3041b 75 3.3 175 2000 .25 12 0.5 56.0 cdll3042b 82 3.0 200 3000 .25 11 0.5 62.2 cdll3043b 91 2.8 250 3000 .25 10 0.5 69.2 cdll3044b 100 2.5 350 3000 .25 9.0 0.5 76.0 cdll3045b 110 2.3 450 4000 .25 8.3 0.5 83.6 note 1 no suffix signifies + 20%. ?a? suffix signifies + 10%, ?b? suffix signifies + 5%. "c" suffix signifies + 2% and "b" suffix signifies + 1%. note 2 zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25c +3c. note 3 zener impedance is derived by superimposing on 1 zt a 60hz rms a.c. current equal to 10% of 1 zt
106 1n3016ur-1 thru 1n3045ur-1 and cdll3016 thru cdll3045b 1000 100 10 1 z zt , zener impedance (ohms) .1 1.0 10 100 operating current l zt (ma) figure 3 zener impedance vs. operating current 0 25 50 75 100 125 150 175 t ec , end cap temperature (c) power derating curve 1000 800 600 400 200 0 pd, rated power dissipation (mw) figure 2
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